| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
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Skyworks Solutions, Inc. |
CAP SILICON 68PF 20% SMD |
2300 |
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Skyworks Solutions, Inc. |
CAP SILICON 1000PF 20% SMD |
0 |
|
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Skyworks Solutions, Inc. |
CAP SILICON 15PF 20% SMD |
0 |
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Silicon capacitors are a class of capacitors fabricated using silicon-based materials and semiconductor processes. They offer high capacitance density, excellent temperature stability, and low equivalent series resistance (ESR). These capacitors are critical in modern electronics for applications requiring miniaturization, high reliability, and performance in extreme environments. Their integration with silicon wafers enables compatibility with advanced IC manufacturing processes, making them essential in RF circuits, power management, and high-frequency systems.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Metal-Insulator-Metal (MIM) Silicon Capacitors | High linearity, low parasitic inductance, stable over temperature | RF ICs, analog circuits, decoupling in SoCs |
| Polysilicon Capacitors | High-temperature endurance, moderate capacitance density | Automotive sensors, industrial control systems |
| Trench Silicon Capacitors | High capacitance per unit area, low leakage current | Power management ICs, DC-DC converters |
| Superjunction Silicon Capacitors | Ultra-low ESR, high ripple current tolerance | High-frequency power supplies, 5G base stations |
A typical silicon capacitor consists of: - Silicon Substrate: Monocrystalline or polycrystalline silicon wafer serving as a base. - Dielectric Layer: Silicon dioxide (SiO ) or silicon nitride (Si N ) for insulation. - Electrodes: Aluminum, copper, or doped polysilicon layers deposited via sputtering or electroplating. - Passivation Layer: Silicon carbide (SiC) or epoxy coating to prevent environmental damage. The structure is optimized for minimal parasitic effects and integration with CMOS processes.
| Parameter | Description | Importance |
|---|---|---|
| Capacitance Range | 0.1 pF to 100 F | Determines charge storage capability |
| Voltage Rating | 2.5V to 100V | Defines safe operating limits |
| Tolerance | 1% to 20% | Affects circuit precision |
| Temperature Coefficient | 50 ppm/ C to 500 ppm/ C | Stability over temperature variations |
| ESR (Equivalent Series Resistance) | 1 m to 50 m | Impacts high-frequency performance |
| Operating Temperature | -55 C to +150 C | Defines environmental robustness |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Murata Manufacturing | SiC-HP Series | High-temperature stability for automotive applications |
| TDK Corporation | CGA Silicon MLCC | MIM structure for 5G RF front-ends |
| Vishay Intertechnology | VJ HIFREQ Silicon | Ultra-low ESR for high-frequency power circuits |
| Infineon Technologies | OptiMOS Trench Capacitor | Integrated with MOSFETs for energy efficiency |
Consider the following factors: - Capacitance and Voltage Requirements: Match ratings to circuit specifications. - Frequency Response: Prioritize low ESR for high-frequency applications. - Environmental Conditions: Select temperature ratings for automotive/aerospace use. - Package Size: Use chip-scale packages for space-constrained designs. - Cost vs. Performance: Balance precision (tight tolerance) with budget constraints.
Key trends shaping silicon capacitors include: - **Advanced Packaging:** 3D stacking and through-silicon vias (TSVs) for higher integration. - **Material Innovations:** Adoption of hafnium oxide (HfO ) for higher dielectric constants. - **Miniaturization:** Sub-micron trench structures for mobile devices. - **High-Temperature Performance:** Growth in EV and renewable energy systems requiring thermal resilience. - **Green Manufacturing:** Reduction of hazardous materials in fabrication processes.