QJD1210011

Manufacturer Part QJD1210011
Manufacturer Powerex, Inc.
Description MOSFET 2N-CH 1200V 100A SIC
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet QJD1210011 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Rds On (Max) @ Id, Vgs:25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id:5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
Power - Max:900W
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
QJD1210011
QJD1210011
Powerex, Inc. QJD1210011 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
QJD1210011 PDF
Same Series
QJD1210SA1
QJD1210SA1
MOSFET 2N-CH 1200V 100A SIC
Powerex, Inc.
QJD1210SB1
QJD1210SB1
MOD MOSFET 1200V 10A DUAL SIC
Powerex, Inc.
QJD1210SA2
QJD1210SA2
MOSFET 2N-CH 1200V 100A SIC
Powerex, Inc.
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