GT60N321(Q)

Manufacturer Part GT60N321(Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description IGBT 1000V 60A 170W TO3P LH
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet GT60N321(Q) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 60A
Power - Max:170 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:330ns/700ns
Test Condition:-
Reverse Recovery Time (trr):2.5 µs
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3PL
Supplier Device Package:TO-3P(LH)
More Information
GT60N321(Q)
GT60N321(Q)
Toshiba Electronic Devices and Storage Corporation GT60N321(Q) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
GT60N321(Q) PDF
Same Series
GT60N321(Q)
GT60N321(Q)
IGBT 1000V 60A 170W TO3P LH
Toshiba Electronic Devices and Storage Corporation
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Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
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