SI4966DY-T1-E3

Manufacturer Part SI4966DY-T1-E3
Manufacturer Vishay / Siliconix
Description MOSFET 2N-CH 20V 8SOIC
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI4966DY-T1-E3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
More Information
SI4966DY-T1-E3
SI4966DY-T1-E3
Vishay / Siliconix SI4966DY-T1-E3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI4966DY-T1-E3 PDF
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