DD1000S33HE3BOSA1

Manufacturer Part DD1000S33HE3BOSA1
Manufacturer IR (Infineon Technologies)
Description MODULE DIODE HVB130-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
Diode Configuration:2 Independent
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):3300 V
Current - Average Rectified (Io) (per Diode):1000A (DC)
Voltage - Forward (Vf) (Max) @ If:3.85 V @ 1000 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:1000 A @ 1800 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-IHVB130-3
More Information
DD1000S33HE3BOSA1
DD1000S33HE3BOSA1
IR (Infineon Technologies) DD1000S33HE3BOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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