GPA025A120MN-ND

Manufacturer Part GPA025A120MN-ND
Manufacturer SemiQ
Description IGBT 1200V 50A 312W TO3PN
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet GPA025A120MN-ND PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):75 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 25A
Power - Max:312 W
Switching Energy:4.15mJ (on), 870µJ (off)
Input Type:Standard
Gate Charge:350 nC
Td (on/off) @ 25°C:57ns/240ns
Test Condition:600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr):480 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3
Supplier Device Package:TO-3PN
More Information
GPA025A120MN-ND
GPA025A120MN-ND
SemiQ GPA025A120MN-ND is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
GPA025A120MN-ND PDF
Same Series
GPA025A120MN-ND
GPA025A120MN-ND
IGBT 1200V 50A 312W TO3PN
SemiQ
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GPA030A120MN-FD
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