2SA1930(Q,M)

Manufacturer Part 2SA1930(Q,M)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS PNP 180V 2A TO220NIS
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 2SA1930(Q,M) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):180 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 1A
Current - Collector Cutoff (Max):5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
Power - Max:2 W
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220NIS
More Information
2SA1930(Q,M)
2SA1930(Q,M)
Toshiba Electronic Devices and Storage Corporation 2SA1930(Q,M) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
2SA1930(Q,M) PDF
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2SA1930(Q,M)

2SA1930(Q,M)

TRANS PNP 180V 2A TO220NIS

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