| Manufacturer Part | IDC08D120T6MX1SA2 |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | DIODE GEN PURP 1.2KV 10A WAFER |
| Category | Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | IDC08D120T6MX1SA2 PDF |
| Availability | 0 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 08 - Dec 12 2025 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 2.05 V @ 10 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 2.7 µA @ 1200 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Sawn on foil |
| Operating Temperature - Junction: | -40°C ~ 175°C |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
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DIODE GEN PURP 1.2KV 10A WAFER
