GT30J341,Q Toshiba Electronic Devices and Storage Corporation GT30J341,Q inventory, pricing, datasheet

Manufacturer Part	GT30J341,Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Description	IGBT TRANS 600V 30A TO3PN
Category	Discrete Semiconductor \| Diodes, Transistor, electronic component–Ample Chip
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Availability	0 pieces
Shipped from	HK warehouse
Expected Shipping	Dec 07 - Dec 11 2025

Product Attributes

Type	Description
Series:	-
Package:	Tray
Part Status:	Active
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	59 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Power - Max:	230 W
Switching Energy:	800µJ (on), 600µJ (off)
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	80ns/280ns
Test Condition:	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):	50 ns
Operating Temperature:	175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P(N)

More Information

GT30J341,Q

Toshiba Electronic Devices and Storage Corporation GT30J341,Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.