RN2907FE,LF(CT

Manufacturer Part RN2907FE,LF(CT
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS 2PNP PREBIAS 0.1W ES6
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:200MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
More Information
RN2907FE,LF(CT
RN2907FE,LF(CT
Toshiba Electronic Devices and Storage Corporation RN2907FE,LF(CT is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
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RN2965(TE85L,F)
TRANS 2PNP PREBIAS 0.2W US6
Toshiba Electronic Devices and Storage Corporation
RN2969(TE85L,F)
RN2969(TE85L,F)
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RN2907FE,LF(CT
RN2907FE,LF(CT
TRANS 2PNP PREBIAS 0.1W ES6
Toshiba Electronic Devices and Storage Corporation
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