SIZ200DT-T1-GE3

Manufacturer Part SIZ200DT-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH DUAL 30V
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIZ200DT-T1-GE3 PDF
Availability 765 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs:5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1510pF @ 15V, 1600pF @ 15V
Power - Max:4.3W (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (3.3x3.3)
More Information
SIZ200DT-T1-GE3
SIZ200DT-T1-GE3
Vishay / Siliconix SIZ200DT-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIZ200DT-T1-GE3 PDF
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