| Manufacturer Part | IDP08E65D1XKSA1 |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | DIODE GEN PURP 650V 8A TO220-2 |
| Category | Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | IDP08E65D1XKSA1 PDF |
| Availability | 736 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 07 - Dec 11 2025 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 8 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 80 ns |
| Current - Reverse Leakage @ Vr: | 40 µA @ 650 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220-2 |
| Operating Temperature - Junction: | -40°C ~ 175°C |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
DIODE GEN PURP 650V 8A TO220-2
DIMENSION=32 X 20 X 8 MM, STYLE
DIMENSION=24 X 3 X 3.75 MM, CONN
IC DELAY LN 10TAP 100NS 14TSSOP
CONN LGH RCPT 1POS CYL
IC OSC VCXO QD FREQ 10CLCC
PHOTODETECTOR SINGLE 35 GHZ XLMD
