IKB03N120H2ATMA1

Manufacturer Part IKB03N120H2ATMA1
Manufacturer IR (Infineon Technologies)
Description IGBT 1200V 9.6A 62.5W TO220-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IKB03N120H2ATMA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Last Time Buy
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):9.6 A
Current - Collector Pulsed (Icm):9.9 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
Power - Max:62.5 W
Switching Energy:290µJ
Input Type:Standard
Gate Charge:22 nC
Td (on/off) @ 25°C:9.2ns/281ns
Test Condition:800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr):42 ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
More Information
IKB03N120H2ATMA1
IKB03N120H2ATMA1
IR (Infineon Technologies) IKB03N120H2ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IKB03N120H2ATMA1 PDF
Same Series
IKB06N60TATMA1
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IGBT 600V 12A 88W TO263-3
IR (Infineon Technologies)
IKB03N120H2ATMA1
IKB03N120H2ATMA1
IGBT 1200V 9.6A 62.5W TO220-3
IR (Infineon Technologies)
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