APT35GP120B2DQ2G

Manufacturer Part APT35GP120B2DQ2G
Manufacturer Roving Networks / Microchip Technology
Description IGBT 1200V 96A 543W TMAX
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet APT35GP120B2DQ2G PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:POWER MOS 7®
Package:Tube
Part Status:Active
IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):96 A
Current - Collector Pulsed (Icm):140 A
Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 35A
Power - Max:543 W
Switching Energy:750µJ (on), 680µJ (off)
Input Type:Standard
Gate Charge:150 nC
Td (on/off) @ 25°C:16ns/95ns
Test Condition:600V, 35A, 4.3Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:-
More Information
APT35GP120B2DQ2G
APT35GP120B2DQ2G
Roving Networks / Microchip Technology APT35GP120B2DQ2G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
APT35GP120B2DQ2G PDF
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