SGB02N120ATMA1

Manufacturer Part SGB02N120ATMA1
Manufacturer IR (Infineon Technologies)
Description IGBT, 6.2A I(C), 1200V V(BR)CES,
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SGB02N120ATMA1 PDF
Availability 235 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):6.2 A
Current - Collector Pulsed (Icm):9.6 A
Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 2A
Power - Max:62 W
Switching Energy:220µJ
Input Type:Standard
Gate Charge:11 nC
Td (on/off) @ 25°C:23ns/260ns
Test Condition:800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
More Information
SGB02N120ATMA1
SGB02N120ATMA1
IR (Infineon Technologies) SGB02N120ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SGB02N120ATMA1 PDF
Same Series
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DHL 2-5 days
Fedex 2-5 days
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