MJE802G

Manufacturer Part MJE802G
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description TRANS NPN DARL 80V 4A TO225AA
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet MJE802G PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-225AA
More Information
MJE802G
MJE802G
Sanyo Semiconductor/ON Semiconductor MJE802G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
MJE802G PDF
Same Series
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POWER BIPOLAR TRANSISTOR
MJE802G
MJE802G
TRANS NPN DARL 80V 4A TO225AA
Sanyo Semiconductor/ON Semiconductor
MJE800
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