Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
C30618GH

C30618GH

Excelitas Technologies

SENSOR PHOTODIODE 1300NM TO18-2

0

MT03-029

MT03-029

Marktech Optoelectronics

PHOTODIODE 950NM 3.6MM2 SMD

12

QSB34CGR

QSB34CGR

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 940NM 2SMD GW

7018

076-11-31-211

076-11-31-211

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

222

SUF005A001

SUF005A001

Thermometrics (Amphenol Advanced Sensors)

SENSOR PHOTODIODE 940NM

456

PD438C

PD438C

Everlight Electronics

SENSOR PHOTODIODE 940NM TO226-2

0

BP104S

BP104S

Vishay / Semiconductor - Opto Division

SENSOR PHOTODIODE 950NM 2DIP

1611

MTAPD-07-014

MTAPD-07-014

Marktech Optoelectronics

SENSOR PHOTODIODE 905NM LCC-3

0

SXUV20HS1

SXUV20HS1

Opto Diode Corporation

PHOTODIODE EUV DETECTOR 5MM

0

1541021ECA170

1541021ECA170

Würth Elektronik Midcom

WL-SDSB SMT PHOTODIODE SIDEVIEW

4920

076-14-21-011

076-14-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

73

100-11-21-221

100-11-21-221

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

181

057-14-21-011

057-14-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

384

PDB-C169

PDB-C169

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

C30954EH

C30954EH

Excelitas Technologies

SENSOR PHOTODIODE 1064NM TO-5

47

A5C-38

A5C-38

OSI Optoelectronics

38-ELEMENT SILICON PHOTODIODE AR

77

SXUVPS4

SXUVPS4

Opto Diode Corporation

PHOTODIODE EUV QUADRANT

0

MICROFJ-60035-TSV-TR1

MICROFJ-60035-TSV-TR1

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 36WBGA

0

445-14-21-305

445-14-21-305

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM CERM

149

PD70-01C/TR7

PD70-01C/TR7

Everlight Electronics

SENSOR PHOTODIODE 940NM 2SMD GW

27651

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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