Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDB-V615-2

PDB-V615-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM PVC WIRE

0

PD438B/S46

PD438B/S46

Everlight Electronics

SENSOR PHOTODIODE 940NM TO226-2

0

OSD60-E

OSD60-E

OSI Optoelectronics

100 MM SQ. HUMAN EYE RESPONSE SI

23

TEMD5510FX01

TEMD5510FX01

Vishay / Semiconductor - Opto Division

SENSOR PHOTODIODE 540NM SMD

1083

SLSD-71N200

SLSD-71N200

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM BOX WIRE

0

IN-S126BTNPD

IN-S126BTNPD

Inolux

TOP VIEW / 1206 / 3.2X1.6X1.1

5543

PD95-21B/TR10

PD95-21B/TR10

Everlight Electronics

SENSOR PHOTODIODE 940NM 2SMD

35

HSDL-5400

HSDL-5400

Lite-On, Inc.

SENSOR PHOTODIODE 875NM 2SMD

0

NTE3033

NTE3033

NTE Electronics, Inc.

D-PIN PHOTODIODE INFRARED

781

SXUV5

SXUV5

Opto Diode Corporation

PHOTODIODE 2.5MM TO-39

0

160-24-21-021

160-24-21-021

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

0

VEMD5510CF-GS15

VEMD5510CF-GS15

Vishay / Semiconductor - Opto Division

SENSOR PHOTODIODE 540NM 4SMD

0

VEMD8081

VEMD8081

Vishay / Semiconductor - Opto Division

PHOTO PIN DIODE

4818

MTAPD-06-014

MTAPD-06-014

Marktech Optoelectronics

SENSOR PHOTODIODE 905NM TO46-2

0

MTD5010N

MTD5010N

Marktech Optoelectronics

SENSOR PHOTODIODE 850NM TO18

0

172-11-31-221

172-11-31-221

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO5

0

066-24-21-011

066-24-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

569

SLD-70BG2A

SLD-70BG2A

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 550NM RADIAL

0

ODD-15WB

ODD-15WB

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO5

0

GUVCL-T21GH

GUVCL-T21GH

Genicom

UV-C LED SENSOR (220-320NM)

76

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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