| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Renesas Electronics America |
DIVERSITY SWITCH |
40000 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SPDT 8GHZ 8MSOP |
1927 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SP8T 2.5GHZ 24QSOP |
104 |
|
 |
Panasonic |
ARD COAXIAL SWITCH |
0 |
|
 |
Panasonic |
IC RF SWITCH SPDT 18GHZ MODULE |
0 |
|
 |
Analog Devices, Inc. |
2:1 MUX/SPDT SWITCH |
4750 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SPDT 2GHZ 20TSSOP |
0 |
|
 |
Metelics (MACOM Technology Solutions) |
IC RF SWITCH SPDT 3.5GHZ 32HQFN |
13150 |
|
 |
Metelics (MACOM Technology Solutions) |
IC RF SWITCH SP3T 20GHZ |
1455 |
|
 |
Analog Devices, Inc. |
WIDEBAND DUAL SPDT |
6000 |
|
 |
Panasonic |
IC RF SWITCH SPDT 8GHZ |
0 |
|
 |
pSemi |
IC RF SWITCH SP5T 1GHZ 32QFN |
0 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SP8T 8GHZ 24LFCSP |
4179 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SPDT 2GHZ 8MSOP |
1333 |
|
 |
Panasonic |
IC RF SWITCH SPDT 18GHZ MODULE |
0 |
|
 |
Panasonic |
IC RF SWITCH SPDT 26.5GHZ MODULE |
0 |
|
 |
Panasonic |
IC RF SWITCH SPDT 18GHZ MODULE |
0 |
|
 |
Analog Devices, Inc. |
GAAS MMIC SPDT SWITCH DC - 3 GHZ |
0 |
|
 |
Radiall USA, Inc. |
SP2 R S3 F 12 TL D P |
6 |
|
 |
CEL (California Eastern Laboratories) |
IC RF SWITCH SPDT 3.8GHZ 6MINIM |
0 |
|
RF (Radio Frequency) and IF (Intermediate Frequency) switches are critical components in wireless communication systems, enabling signal routing between transmitter, receiver, and antenna. RFID (Radio Frequency Identification) RF switches specifically manage signal paths in RFID readers and tags. These electromechanical or solid-state devices operate in frequency ranges from kHz to GHz, playing vital roles in 5G, IoT, and industrial automation.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Electromechanical Switches | High isolation (>85dB), low insertion loss (<0.5dB), limited lifespan (107 cycles) | Lab test equipment, fixed wireless systems |
| Solid-State Switches | Fast switching speed (<20ns), 50 impedance, moderate power handling (30dBm) | 5G base stations, software-defined radios |
| MEMS Switches | Ultra-low insertion loss (0.2dB), high linearity, vacuum encapsulation | Aerospace phased arrays, medical imaging |
| RFID Antenna Switches | Impedance matching networks, HF/UHF band optimization | Smart logistics, access control systems |
Typical RF switches consist of: - Housing: Aluminum alloy or ceramic packages - Contact system: Gold-plated beryllium copper contacts - Actuator: Electromagnetic coil or MEMS membrane - RF ports: SMA/N-type connectors or surface-mount pads - Dielectric materials: PTFE or ceramic insulators
| Parameter | Typical Values | Importance |
|---|---|---|
| Frequency Range | DC-18GHz (standard) | Determines application bandwidth |
| Insertion Loss | 0.3-2.0 dB | Affects signal strength |
| Isolation | 40-100 dB | Prevents signal interference |
| Power Handling | 10W-100W | Limits maximum operational power |
| Switching Speed | 5ms-50ns | Impacts system response time |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Keysight Technologies | U1880A | 67GHz bandwidth, 500ns switching speed |
| Analog Devices | ADG904 | 4-channel, 3GHz, CMOS process |
| STMicroelectronics | AFBR-5010 | MEMS-based, 0.15dB insertion loss |
| Infineon | BTS724G | Automotive-grade, 40V load protection |
Key considerations: - Frequency matching with system requirements - Power handling capacity with 20% safety margin - Environmental factors (temperature, vibration) - Lifecycle requirements (electromechanical vs. solid-state) - Cost vs. performance trade-offs
Future developments include: - Millimeter-wave switches for 5G/6G (28-100GHz) - Integrated passive devices (IPDs) with embedded switches - Energy-harvesting RFID switch solutions - AI-driven smart switch arrays for dynamic spectrum sharing - Nano-MEMS technology achieving sub-10ns switching