PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UC3706N

UC3706N

Texas Instruments

IC GATE DRVR LOW-SIDE 16DIP

101

UCC27538DBVR

UCC27538DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

2281

TPS2813PW

TPS2813PW

Texas Instruments

NAND GATE MOSFET DRIVER

800

UCC27201ADRCT

UCC27201ADRCT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 9VSON

186

TPS2813PWG4

TPS2813PWG4

Texas Instruments

NAND GATE MOSFET DRIVER

300

UC1709J

UC1709J

Texas Instruments

UC1709 INVERTING HIGH-SPEED MOSF

0

UCC27211DRMT

UCC27211DRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

1377

TPS2811PWR

TPS2811PWR

Texas Instruments

TPS2811 INVERTING DUAL HIGH-SPEE

8000

UCC27425P

UCC27425P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

471

TPS2817DBVT

TPS2817DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

475

UCC27424DRG4

UCC27424DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27524DGN

UCC27524DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

973

UCC27322DGNR

UCC27322DGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

3097

UCC27524AQDRQ1

UCC27524AQDRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

177

UCC37325DGNRG4

UCC37325DGNRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

LM25101BMAX/NOPB

LM25101BMAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

0

UC1709L

UC1709L

Texas Instruments

UC1709 INVERTING HIGH-SPEED MOSF

782

LM5113TME/NOPB

LM5113TME/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 12DSBGA

26912

5962-8761901V2A

5962-8761901V2A

Texas Instruments

UC1707-SP COMPLEMENTARY HIGH SPE

40

UCC27712D

UCC27712D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

580

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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