PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR2214SSPBF

IR2214SSPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 24SSOP

1879

IRS2336DSPBF

IRS2336DSPBF

IR (Infineon Technologies)

IRS2336 - GATE DRIVER

1025

IR2130JTRPBF

IR2130JTRPBF

IR (Infineon Technologies)

IR2130 - GATE DRIVER

4940

IRS2334STRPBF

IRS2334STRPBF

IR (Infineon Technologies)

IRS2334 - GATE DRIVER

56000

IR25600PBF

IR25600PBF

IR (Infineon Technologies)

IR25600 - GATE DRIVER

100

2EDN8523FXTMA1

2EDN8523FXTMA1

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE DSO8

4343

TLF11251EPXUMA1

TLF11251EPXUMA1

IR (Infineon Technologies)

TLF11251EPXUMA1

2740

IR2130JPBF

IR2130JPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

205

IR21844STRPBF

IR21844STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

6082

CHL8510CRT

CHL8510CRT

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 10DFN

494

IR2136SPBF

IR2136SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

2112

IRS2113PBF

IRS2113PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

295

IRS21271SPBF

IRS21271SPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

3790

AUIRS2124STR

AUIRS2124STR

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

TLE92108231QXXUMA1

TLE92108231QXXUMA1

IR (Infineon Technologies)

IC MOSFET DRIVER ADAPTIVE

2330

IRS2336DSTRPBF

IRS2336DSTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

252

IR2103PBF

IR2103PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

2755

IRS2124STRPBF

IRS2124STRPBF

IR (Infineon Technologies)

HIGH SIDE DRIVER IC

17400

IR2131JPBF

IR2131JPBF

IR (Infineon Technologies)

HALF BRIDGE BASED MOSFET DRIVER,

4617

IR21531STRPBF

IR21531STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

7295

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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