PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
2EDN8524RXUMA1

2EDN8524RXUMA1

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8TSSOP

189

IR2113STRPBF

IR2113STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

1460

AUIRS21271STR

AUIRS21271STR

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

1171

IR2153STRPBF

IR2153STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

5718

IR2135STRPBF

IR2135STRPBF

IR (Infineon Technologies)

IR2135S - GATE DRIVER

33754

IRS21834SPBF

IRS21834SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

3763

IRS2890DSTRPBF

IRS2890DSTRPBF

IR (Infineon Technologies)

IRS2890 - GATE DRIVER

47500

IRS2118PBF

IRS2118PBF

IR (Infineon Technologies)

IRS2118 - GATE DRIVER

6034

IR2106PBF

IR2106PBF

IR (Infineon Technologies)

IR2106 - GATE DRIVER

550

IR25601SPBF

IR25601SPBF

IR (Infineon Technologies)

HALF BRIDGE BASED PERIPHERAL DRI

12390

IR21271STRPBF

IR21271STRPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

1859

IR2113SPBF

IR2113SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

913

2ED2109S06FXUMA1

2ED2109S06FXUMA1

IR (Infineon Technologies)

IC HALF BRIDGE GATE DRIVER 650V

2226

IR2128STRPBF

IR2128STRPBF

IR (Infineon Technologies)

IR2128 - BUFFER/INVERTER BASED M

8335

2EDN8524FXTMA1

2EDN8524FXTMA1

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE DSO8

3638

IR2108SPBF

IR2108SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

175

IR2133STRPBF

IR2133STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

IR2101SPBF

IR2101SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

631

IR2304PBF

IR2304PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

2355

2EDN8523RXUMA1

2EDN8523RXUMA1

IR (Infineon Technologies)

2EDN8523 - GATE DRIVER

86443

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

RFQ BOM Call Skype Email
Top