PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
2ED28073J06FXUMA1

2ED28073J06FXUMA1

IR (Infineon Technologies)

LEVEL SHIFT JUNCTION ISO

2500

IRS2111PBF

IRS2111PBF

IR (Infineon Technologies)

IRS2111 - GATE DRIVER

500

IRS2104PBF

IRS2104PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

2027

AUIRS2181STR

AUIRS2181STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

815

IRS21091STRPBF

IRS21091STRPBF

IR (Infineon Technologies)

IRS21091 - GATE DRIVER

1396

IR2132STRPBF

IR2132STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

AUIRS21814STR

AUIRS21814STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

2EDF7175FXUMA2

2EDF7175FXUMA2

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDG DSO16

0

IRS2128STRPBF

IRS2128STRPBF

IR (Infineon Technologies)

BUFFER/INVERTER BASED MOSFET DRI

1007

IR21363JTRPBF

IR21363JTRPBF

IR (Infineon Technologies)

IR21363J - GATE DRIVER

3781

1ED44173N01BXTSA1

1ED44173N01BXTSA1

IR (Infineon Technologies)

ISOLATED DRIVER

2917

IR2181SPBF

IR2181SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

509

1EDB9275FXUMA1

1EDB9275FXUMA1

IR (Infineon Technologies)

IC IGBT DVR

0

IRS2453DSPBF

IRS2453DSPBF

IR (Infineon Technologies)

IC GATE DRVR FULL-BRIDGE 14SOIC

1819

IRS2334SPBF

IRS2334SPBF

IR (Infineon Technologies)

IRS2334 - GATE DRIVER

5760

IR21531PBF

IR21531PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

17997

IR2103SPBF

IR2103SPBF

IR (Infineon Technologies)

IR2103S - HALF-BRIDGE DRIVER

6702

2EDN8523GXTMA1

2EDN8523GXTMA1

IR (Infineon Technologies)

BUFFER/INVERTER PERIPH DRIVER

0

IRS21084PBF

IRS21084PBF

IR (Infineon Technologies)

IRS21084 - GATE DRIVER

11600

6ED003L06F2XUMA1

6ED003L06F2XUMA1

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE DSO28

702

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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