PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IRS2183SPBF

IRS2183SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

4375

IRS2336SPBF

IRS2336SPBF

IR (Infineon Technologies)

IRS2336 - GATE DRIVER

6000

IR21814PBF

IR21814PBF

IR (Infineon Technologies)

HALF BRIDGE BASED MOSFET DRIVER,

9850

1EDN8550BXTSA1

1EDN8550BXTSA1

IR (Infineon Technologies)

1EDN8550 - BUFFER/INVERTER BASED

59050

IRS26072DSTRPBF

IRS26072DSTRPBF

IR (Infineon Technologies)

HALF BRIDGE BASED PERIPHERAL DRI

22500

IRS2336DJTRPBF

IRS2336DJTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2181PBF

IR2181PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

1626

IRS2005SPBF

IRS2005SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

2792

2ED020I12F2XUMA1

2ED020I12F2XUMA1

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDG DSO36-58

867

IRS2128PBF

IRS2128PBF

IR (Infineon Technologies)

BUFFER/INVERTER BASED MOSFET DRI

8494

1EBN1001AEXUMA1

1EBN1001AEXUMA1

IR (Infineon Technologies)

IC GATE DRV HI/LOW SIDE DSO14-43

0

IRS2302SPBF

IRS2302SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

242

IR2233JTRPBF

IR2233JTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

245

IRS2330DJPBF

IRS2330DJPBF

IR (Infineon Technologies)

3-PHASE-BRIDGE DRIVER

4644

IRS2117SPBF

IRS2117SPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

735

IR21814STRPBF

IR21814STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IRS25752LTRPBF

IRS25752LTRPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE SOT23-6

6105

IR2132PBF

IR2132PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28DIP

0

IRS2186STRPBF

IRS2186STRPBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

0

IRS21531DSPBF

IRS21531DSPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

3286

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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