PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MP18021HQ-A-LF-P

MP18021HQ-A-LF-P

MPS (Monolithic Power Systems)

IC GATE DRVR HALF-BRIDGE 8QFN

0

TC4469EPD

TC4469EPD

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 14DIP

249

TC1413COA

TC1413COA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

0

NCP81071BMNTXG

NCP81071BMNTXG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR LOW-SIDE 8WDFN

224

1SC0450E2A0-45

1SC0450E2A0-45

Power Integrations

IC GATE DRVR HI/LOW SIDE MODULE

3

LM25101CMY/NOPB

LM25101CMY/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8MSOP

0

UC2708NE

UC2708NE

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

1921

MAX4428CPA

MAX4428CPA

Analog Devices, Inc.

DUAL 1.5A MOSFET DRIVER

2914

TC4427ACOA713

TC4427ACOA713

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

1828

TC4424AVMF

TC4424AVMF

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

144

TC4422VPA

TC4422VPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

0

FAN7085MX-GF085

FAN7085MX-GF085

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HIGH-SIDE 8SOIC

80

ISL89168FRTAZ

ISL89168FRTAZ

Intersil (Renesas Electronics America)

AND GATE BASED MOSFET DRIVER

1565

MIC4422YN

MIC4422YN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

420

IR2136STRPBF

IR2136STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

28

IR2235STRPBF

IR2235STRPBF

IR (Infineon Technologies)

IR2235S - GATE DRIVER

2000

IXDN604SIATR

IXDN604SIATR

Wickmann / Littelfuse

IC GATE DRVR LOW-SIDE 8SOIC

878

2ED2184S06FXUMA1

2ED2184S06FXUMA1

IR (Infineon Technologies)

IC GATE DRIVER 8-DSO

377

LTC3900HS8#PBF

LTC3900HS8#PBF

Analog Devices, Inc.

IC GATE DRVR LOW-SIDE 8SO

0

ISL6613IRZ

ISL6613IRZ

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

185

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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