PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
MAX4420ESA+T

MAX4420ESA+T

Maxim Integrated

IC GATE DRVR LOW-SIDE 8SOIC

0

TC427EPA

TC427EPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

391

IR2108STRPBF

IR2108STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

4588

UC2714N

UC2714N

BUFFER/INVERTER MOSFET DRIVER

7500

MIC4426YMM

MIC4426YMM

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8MSOP

221

NCP81258MNTBG

NCP81258MNTBG

Sanyo Semiconductor/ON Semiconductor

IC GATE DRVR HALF-BRIDGE 8DFN

1383000

A4937KLPTR-A-T

A4937KLPTR-A-T

Allegro MicroSystems

IC GATE DRVR HALF-BRIDGE 28TSSOP

3910

MCP1405T-E/MF

MCP1405T-E/MF

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DFN

0

IRS21531DPBF

IRS21531DPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

2604

NCP81071AMNTXG

NCP81071AMNTXG

BUFFER/INVERTER BASED MOSFET DRI

20787

2EDL8124GXUMA1

2EDL8124GXUMA1

IR (Infineon Technologies)

INT. POWERSTAGE/DRIVER

0

DS3658N/NOPB

DS3658N/NOPB

Texas Instruments

AND GATE BASED PERIPHERAL DRIVER

791

UC3714N

UC3714N

BUFFER/INVERTER BASED MOSFET DRI

4512

MAX8552EUB

MAX8552EUB

Analog Devices, Inc.

SINGLE-PHASE MOSFET DRIVER

1936

ISL6208CB-T

ISL6208CB-T

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

2000

2ED2181S06FXUMA1

2ED2181S06FXUMA1

IR (Infineon Technologies)

IC HALF BRIDGE GATE DRIVER 650V

2181

MIC4100YM

MIC4100YM

Roving Networks / Microchip Technology

IC GATE DRVR HALF-BRIDGE 8SOIC

318

ISL6207CBZ

ISL6207CBZ

Intersil (Renesas Electronics America)

HALF BRIDGE BASED MOSFET DRIVER

645

TC4427AVPA

TC4427AVPA

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

378

MCP14E5T-E/SN

MCP14E5T-E/SN

Roving Networks / Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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