Memory

Part Number	Description / PDF	Quantity
LE25S161PCTXG Sanyo Semiconductor/ON Semiconductor	IC FLASH 16MBIT SPI 70MHZ 8UDFN	805120000
LE25W81QES00-AH-1 Sanyo Semiconductor/ON Semiconductor	IC FLASH 8MBIT SPI 30MHZ 8VDFN	0
CAT24C04TDI-GT3 Sanyo Semiconductor/ON Semiconductor	EEPROM SERIAL I2C	0
CAT24C512C8UTR Sanyo Semiconductor/ON Semiconductor	IC EEPROM 512KBIT I2C 8WLCSP	12100000
CAT24C04C5ATR Sanyo Semiconductor/ON Semiconductor	IC EEPROM 4KBIT I2C 5WLCSP	205000
LE25S40FDW00-AH Sanyo Semiconductor/ON Semiconductor	IC FLASH MEM 4MBIT SERIAL 8SOIC	0
N24S64BC4DYT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64K I2C 1MHZ 4WLCSP	0
N24S64C4DYT3G Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT I2C 1MHZ 4WLCSP	0
LE25S40AMBTWG Sanyo Semiconductor/ON Semiconductor	IC FLASH MEM 4MBIT SERIAL 8SOIC	0
N93C66BT3ETAG Sanyo Semiconductor/ON Semiconductor	4KB MICROWIRE SER EEPROM	45000
CAT28LV64WI20 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 28SOIC	0
NM93CS46M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 1MHZ 8SO	0
NM93CS06M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 256B SPI 1MHZ 8SO	0
CAT25128VI-GD Sanyo Semiconductor/ON Semiconductor	IC EEPROM 128KB SERIAL SPI 8TSSO	0
NM27C020V120 Sanyo Semiconductor/ON Semiconductor	IC EPROM 2MBIT PARALLEL 32PLCC	0
CAT28LV64GI-25T Sanyo Semiconductor/ON Semiconductor	IC EEPROM 64KBIT PARALLEL 32PLCC	0
NM93CS56M8 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 2KBIT SPI 1MHZ 8SO	0
NM93C46LZN Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 250KHZ 8DIP	0
CAT28C16ALI20 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 16KBIT PARALLEL 24DIP	0
N02L63W3AT25IT Sanyo Semiconductor/ON Semiconductor	IC SRAM 2MBIT PARALLEL 44TSOP II	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)