Memory

Part Number	Description / PDF	Quantity
BR24G04FVT-3AGE2 ROHM Semiconductor	IC EEPROM 4KBIT I2C 1MHZ 8TSSOPB	1128
BR93G56FVT-3AGE2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 3MHZ 8TSSOPB	2196
BR93G86FVM-3AGTTR ROHM Semiconductor	IC EEPROM 16KBIT SPI 3MHZ 8MSOP	1074
BR24S64FV-WE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 8SSOPB	0
BR24T02F-WGE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SOP	2230
BR93A56RFVT-WME2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 2MHZ 8TSSOPB	3000
BR25H640FJ-2CE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 10MHZ 8SOPJ	2500
BR24T04FVM-WTR ROHM Semiconductor	IC EEPROM 4KBIT I2C 400KHZ 8MSOP	7616
BR24G02FVM-3GTTR ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8MSOP	8249
BR25S128FVT-WE2 ROHM Semiconductor	IC EEPROM 128K SPI 20MHZ 8TSSOP	4517
BR25160-10TU-1.8 ROHM Semiconductor	IC EEPROM 16KBIT SPI 3MHZ 8TSSOP	0
BR24T1MFJ-3AME2 ROHM Semiconductor	IC EEPROM 1MBIT I2C 1MHZ 8SOPJ	2100
BR24C02-MN6TP ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SO	106
BR24G08FVT-3AGE2 ROHM Semiconductor	IC EEPROM 8K I2C 1MHZ 8TSSOP	2685
BR24G02F-3GTE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SOP	2080
BR24S128F-WE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 8SOP	526
BR93H76RFJ-2CE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 2MHZ 8SOPJ	2485
BR25G128FVM-3GTR ROHM Semiconductor	IC EEPROM 128KBIT SPI 8MSOP	2283
BR25S640FJ-WE2 ROHM Semiconductor	IC EEPROM 64KBIT SPI 20MHZ 8SOPJ	4803
BR25S320FVM-WTR ROHM Semiconductor	IC EEPROM 32KBIT SPI 20MHZ 8MSOP	5136

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)