Memory

Part Number	Description / PDF	Quantity
S34ML04G104BHV010 Flip Electronics	IC FLASH 4GBIT PARALLEL 63BGA	4247
S29GL128P90FFIR20A Flip Electronics	IC FLASH 128MBIT PARALLEL 64FBGA	601
CY7C1046D-10VXI Flip Electronics	IC SRAM 4MBIT PARALLEL 32SOJ	0
S25FL216K0PMFI041 Flip Electronics	IC FLASH 16MBIT SPI/DUAL 8SOIC	0
S29GL01GP12FFI010 Flip Electronics	IC FLASH 1GBIT PARALLEL 64FBGA	32558
S29GL01GP13FFIV13 Flip Electronics	IC FLASH 1GBIT PARALLEL 64FBGA	0
S34ML04G204BHI010 Flip Electronics	IC FLASH 4GBIT PARALLEL 63BGA	13
CY7C028-15AXC Flip Electronics	IC SRAM 1MBIT PARALLEL 100TQFP	0
7025S25PF Flip Electronics	IC SRAM 128KBIT PARALLEL 100TQFP	537
CY7C1041DV33-10VXI Flip Electronics	IC SRAM 4MBIT PARALLEL 44SOJ	10150
MT29F32G08CBACAWP:C Flip Electronics	IC FLSH 32GBIT PARALLEL 48TSOP I	449
S25FL032P0XNFI010 Flip Electronics	IC FLASH 32MBIT SPI/QUAD 8USON	98172
S34ML08G201TFV000 Flip Electronics	IC FLASH 8GBIT PARALLEL 48TSOP I	0
CYD09S72V-133BBC Flip Electronics	IC SRAM 9MBIT PARALLEL 484FBGA	2586
CY62256VNLL-70SNXIT Flip Electronics	IC SRAM 256KBIT PARALLEL 28SOIC	810
M25P128-VMF6PB Flip Electronics	IC FLSH 128MBIT SPI 54MHZ 16SO W	265
S25FL128P0XMFI001 Flip Electronics	IC FLASH 128MBIT SPI/QUAD 16SOIC	22138
S34ML02G200GHI000 Flip Electronics	IC FLASH 2GBIT PARALLEL 67BGA	0
CY7C025E-25AXC Flip Electronics	IC SRAM 128KBIT PARALLEL 100TQFP	36664
PC28F512P30EFA Flip Electronics	IC FLASH 512MBIT PAR 64EASYBGA	1111

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)