Memory

Part Number	Description / PDF	Quantity
DS28DG02G-3C+ Analog Devices, Inc.	IC EEPROM 2KBIT SPI 2MHZ 36TQFN	0
DS1251Y-150 Analog Devices, Inc.	4096K NV SRAM & PHANTOM CLOCK	533
DS1220AD-200 Analog Devices, Inc.	IC NVSRAM 16KBIT PARALLEL 24EDIP	740
DS3510T+TR Analog Devices, Inc.	DS3510 I2C GAMMA AND VCOM BUFFER	500
DS2016R-100+ Analog Devices, Inc.	IC SRAM 16KBIT PARALLEL 24SOIC	0
DS1230W-150 Analog Devices, Inc.	IC NVSRAM 256KBIT PAR 28EDIP	1382
DS1230AB-200 Analog Devices, Inc.	IC NVSRAM 256KBIT PAR 28EDIP	3648
DS1245AB-120IND+ Analog Devices, Inc.	IC NVSRAM 1MBIT PARALLEL 32EDIP	173
DS1249Y-100 Analog Devices, Inc.	IC NVSRAM 2MBIT PARALLEL 32EDIP	0
DS1220AB-150 Analog Devices, Inc.	IC NVSRAM 16KBIT PARALLEL 24EDIP	92
DS2065W-100# Analog Devices, Inc.	IC NVSRAM 8MBIT PARALLEL 256BGA	1142
DS1350WP-150 Analog Devices, Inc.	IC NVSRAM 4MBIT PAR 34PWRCAP	473
DS2502-E48 Analog Devices, Inc.	IEEE EUI-64 NODE ADDRESS CHIP	14872
DS2030AB-70# Analog Devices, Inc.	IC NVSRAM 256KBIT PAR 256BGA	205
DS1225AB-150 Analog Devices, Inc.	IC NVSRAM 64KBIT PARALLEL 28EDIP	47
DS1345YL-70 Analog Devices, Inc.	IC NVSRAM 1MBIT PARALLEL 34LPM	530
DS1200S+ Analog Devices, Inc.	DS1200 SERIAL RAM CHIP	35241
DS2502 Analog Devices, Inc.	IC EPROM 1KBIT 1-WIRE TO92-3	329
DS2502P-E64 Analog Devices, Inc.	IC EPROM 1KBIT 1-WIRE 6TSOC	268
DS2045AB-70# Analog Devices, Inc.	IC NVSRAM 1MBIT PARALLEL 256BGA	192

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)