Memory

Part Number	Description / PDF	Quantity
SFEM4096B1EA1TO-I-GE-111-E02 Swissbit	IC FLASH 16GBIT EMMC 153BGA	0
SFEM016GB1EA1TO-I-GE-121-STD Swissbit	IC FLASH 128GBIT EMMC 153BGA	22
SFEM008GB1EA1TO-I-GE-111-E04 Swissbit	IC FLASH 32GBIT EMMC 153BGA	0
SFEM032GB1EA1TO-I-HG-12P-STD Swissbit	IC FLASH 256GBIT EMMC 153BGA	18
SFEM4096B1EA1TO-I-GE-121-STD Swissbit	IC FLASH 32GBIT EMMC 153BGA	0
SFEM064GB1EA1TO-I-HG-111-STD Swissbit	IC FLASH 512GBIT EMMC 153BGA	0
SFEM008GB1EA1TO-I-GE-12P-STD Swissbit	IC FLASH 64GBIT EMMC 153BGA	1
SFEM008GB1EA1TO-I-GE-121-STD Swissbit	IC FLASH 64GBIT EMMC 153BGA	0
SFEM064GB1EA1TO-I-HG-111-E32 Swissbit	IC FLASH 256GBIT EMMC 153BGA	0
SFEM032GB1EA1TO-I-LF-111-STD Swissbit	IC FLASH 256GBIT EMMC 153BGA	0
SFEM016GB1EA1TO-I-GE-111-E08 Swissbit	IC FLASH 64GBIT EMMC 153BGA	0
SFEM4096B1EA1TO-I-GE-111-STD Swissbit	IC FLASH 32GBIT EMMC 153BGA	0
SFEM064GB1EA1TO-I-HG-121-STD Swissbit	IC FLASH 512GBIT EMMC 153BGA	8
SFEM2048B1EA1TO-I-GE-12P-STD Swissbit	IC FLASH 16GBIT EMMC 153BGA	10
SFEM016GB1EA1TO-I-GE-111-STD Swissbit	IC FLASH 128GBIT EMMC 153BGA	0
SFEM4096B1EA1TO-I-GE-12P-STD Swissbit	IC FLASH 32GBIT EMMC 153BGA	15
SFEM032GB1EA1TO-I-LF-111-E16 Swissbit	IC FLASH 128GBIT EMMC 153BGA	0
SFEM016GB1EA1TO-I-LF-12P-STD Swissbit	IC FLASH 128GBIT EMMC 153BGA	0
SFEM008GB1EA1TO-I-GE-111-STD Swissbit	IC FLASH 64GBIT EMMC 153BGA	0
SFEM032GB1EA1TO-I-LF-121-STD Swissbit	IC FLASH 256GBIT EMMC 153BGA	42

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)