Memory

Part Number	Description / PDF	Quantity
CY62148DV30L-55ZSXI Rochester Electronics	STANDARD SRAM, 512KX8	727
CY7C1021CV33-12BAIT Rochester Electronics	STANDARD SRAM, 64KX16	4000
CY62128DV30LL-55ZAIT Rochester Electronics	STANDARD SRAM, 128KX8	9000
CY7C1024AV33-15AC Rochester Electronics	STANDARD SRAM, 128KX24	660
CY7C188-25VCT Rochester Electronics	STANDARD SRAM, 32KX9, 25NS	1000
CY62157DV20L-70BVI Rochester Electronics	STANDARD SRAM, 512KX16, 70NS	137
CY7C1520AV18-200BZI Rochester Electronics	DDR SRAM, 2MX36, 0.45NS	217
CY7C1339A-83AC Rochester Electronics	128K X 32 SYNCHRONOUS BURST SRAM	6151
CY7C09269V-12AC Rochester Electronics	IC SRAM 256KBIT PARALLEL 100TQFP	195
CY7C1355C-133AXIT Rochester Electronics	ZBT SRAM, 256KX36, 6.5NS	325
CY7C1360B-166AJI Rochester Electronics	CACHE SRAM, 256KX36, 3.5NS	359
CY7C188-25VC Rochester Electronics	STANDARD SRAM, 32KX9, 25NS	922
CY7C1041BV33-15ZCT Rochester Electronics	STANDARD SRAM, 256KX16, 15NS	2000
CY7C1356CV25-250AXC Rochester Electronics	ZBT SRAM, 512KX18, 2.8NS	48
CY7C1361B-100AJC Rochester Electronics	CACHE SRAM, 256KX36, 8.5NS	945
CY7C1370B-133BGC Rochester Electronics	IC SRAM 18MBIT PARALLEL 119PBGA	91
CY7C199-8VCT Rochester Electronics	SRAM CHIP ASYNC SINGLE 5V 256K B	599
CY27H010-35WC Rochester Electronics	UVPROM, 128KX8, 35NS CDIP32	848
CY7C1381BV25-100AC Rochester Electronics	STANDARD SRAM, 512KX36, 8.5NS	63
PALCE20V8-25JCQ Rochester Electronics	ELECTRICALLY ERASABLE PAL DEVIC	1110

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)