Memory

Part Number	Description / PDF	Quantity
IS62WV10248EBLL-45TLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 8MBIT PARALLEL 44TSOP II	268
24FC08T-I/ST Roving Networks / Microchip Technology	IC EEPROM 8KBIT I2C 1MHZ 8TSSOP	0
AS7C34096A-10JCN Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 36SOJ	131
24LC08BT-I/MC Roving Networks / Microchip Technology	IC EEPROM 8KBIT I2C 400KHZ 8DFN	0
7005L15JG8 Renesas Electronics America	IC SRAM 64KBIT PARALLEL 68PLCC	0
S29GL064N11FFIV23 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 64FBGA	0
IS61WV51216EDALL-20TLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 8MBIT PARALLEL 44TSOP II	0
25C160T/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	0
7130LA100CB Renesas Electronics America	IC SRAM 8KBIT PARALLEL SB48	0
BR24G01FJ-3AGTE2 ROHM Semiconductor	IC EEPROM 1KBIT I2C 1MHZ 8SOPJ	0
71V3577SYZC3G	128K X 36 3.3V SYNCHRONOUS SRAM	0
AT24C32D-XHM-B Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C 1MHZ 8TSSOP	1319
M95640-DFMC6TG STMicroelectronics	IC EEPROM 64KBIT SPI 20MHZ 8MLP	0
SST39VF3201B-70-4I-EKE-T Roving Networks / Microchip Technology	IC FLASH 32MBIT PARALLEL 48TSOP	0
25AA080B-I/P Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 10MHZ 8DIP	506
24AA64T-I/SM Roving Networks / Microchip Technology	IC EEPROM 64KBIT I2C 8SOIJ	0
BR93G86NUX-3ATTR ROHM Semiconductor	IC EEPROM 16KBIT VSON008X2030	225
RMLV1616AGBG-5S2#KC0 Renesas Electronics America	IC SRAM 16MBIT PARALLEL 48TFBGA	3219
S29GL256P90FFIR10A Cypress Semiconductor	IC FLASH 256MBIT PARALLEL 64FBGA	0
24AA256T-I/MNY Roving Networks / Microchip Technology	IC EEPROM 256KBIT I2C 8TDFN	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)