Transistors - JFETs

Image	Part Number	Description / PDF	Quantity	Rfq
	DSK5J01P0L Panasonic	JFET N-CH 30MA 150MW SMINI3-F2-B	0
	BFR31LT1 Sanyo Semiconductor/ON Semiconductor	JFET N-CH 225MW SOT23	0
	2N4118A Vishay / Siliconix	MOSFET N-CH 40V 80UA TO-206AF	0
	J176_D27Z Sanyo Semiconductor/ON Semiconductor	JFET P-CH 30V 0.35W TO92	0
	2SK3372GUL Panasonic	JFET N-CH 2MA 100MW SSSMINI-3	0
	SST5461-T1-E3 Vishay / Siliconix	JFET P-CH 55V 2MA SOT-23	0
	2N5460_D27Z Sanyo Semiconductor/ON Semiconductor	JFET P-CH 40V 0.35W TO92	0
	MPF4392G Sanyo Semiconductor/ON Semiconductor	JFET N-CH 30V 0.35W TO92	0
	PMBFJ310,215 NXP Semiconductors	JFET N-CH 25V 250MW SOT23	0
	BFT46,215 NXP Semiconductors	JFET N-CH 10MA 250MW SOT23	0
	2N4341 Central Semiconductor	IC JUNCTION FET N-CH TO-18	0
	CP210-2N4416-CT20 Central Semiconductor	TRANS JFET NCH 1=20PCS	0
	2N2608 Central Semiconductor	IC JUNCTION FET P-CH TO-18	0
	J108_D74Z Sanyo Semiconductor/ON Semiconductor	JFET N-CH 25V 625MW TO92	0
	PN4092_D26Z Sanyo Semiconductor/ON Semiconductor	JFET N-CH 40V 0.625W TO92	0
	SST4119-T1-E3 Vishay / Siliconix	JFET N-CH 70V 200UA SOT-23	0
	PF5103 Sanyo Semiconductor/ON Semiconductor	JFET N-CH 40V 0.625W TO92	0
	CP210-2N4416A-CT Central Semiconductor	TRANS JFET N-CH VHF AMP 5"	0
	2N5547JTXV01 Vishay / Siliconix	JFET N-CH 50V TO-71	0
	CMPFJ310 TR Central Semiconductor	IC JFET P-CH SOT23-3	0

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
N-channel JFET	Higher electron mobility, faster operation	Audio amplifiers, RF mixers
P-channel JFET	Complementary to N-channel, lower speed	Power switching, analog switches
Dual-gate JFET	Two control gates for improved linearity	TV tuners, communication systems
High-frequency JFET	Optimized for GHz-range performance	RF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

Parameter	Description	Importance
V_GS(off)	Gate-source cutoff voltage	Determines operating voltage range
I_DSS	Saturation drain current	Defines maximum current capability
g_m	Transconductance	Measures amplification efficiency
R_DS(on)	On-state resistance	Impacts power dissipation
f_T	Transition frequency	Limits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
TI (Texas Instruments)	J111	General-purpose N-channel JFET
ON Semiconductor	2N5457	High-voltage switching applications
Infineon Technologies	BF862	Low-noise RF amplifier JFET
STMicroelectronics	STJ105	Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high I_DSS), or RF (high f_T) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices