Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FZ1800R17HP4B29BOSA2

FZ1800R17HP4B29BOSA2

IR (Infineon Technologies)

FZ1800R17 - IGBT MODULE

88

BYM300B170DN2HOSA1

BYM300B170DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 650V 40A 20MW

0

DF200R12PT4B6BOSA1

DF200R12PT4B6BOSA1

IR (Infineon Technologies)

DFXR12P - IGBT MODULE

90

6PS03012E33G34160NOSA1

6PS03012E33G34160NOSA1

IR (Infineon Technologies)

IGBT MODULE 300V 234A 2100W

0

VS-ETF150Y65N

VS-ETF150Y65N

Vishay General Semiconductor – Diodes Division

IGBT MOD 650V 201A 600W

8

APTGL180A1202G

APTGL180A1202G

Microsemi

IGBT MODULE 1200V 220A 750W SP2

2

6MS20017E43W38170NOSA1

6MS20017E43W38170NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0

FZ1200R17HP4B2BOSA2

FZ1200R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MOD 1700V 1200A 7800W

0

FP100R12KT4PBPSA1

FP100R12KT4PBPSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

138

FP25R12KT4B15BOSA1

FP25R12KT4B15BOSA1

IR (Infineon Technologies)

FP25R12 - IGBT MODULE

122

FF600R12ME4CB11BOSA1

FF600R12ME4CB11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1060A 4050W

0

FP20R06W1E3BOMA1

FP20R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 27A 94W

16

APTGT150TL60G

APTGT150TL60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 200A 480W SP6

0

FF1400R17IP4PBOSA1

FF1400R17IP4PBOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1400A

0

FF300R12ME4B11BPSA1

FF300R12ME4B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 450A 1600W

10

FP15R12W1T4BOMA1

FP15R12W1T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 28A 130W

23

MG1275H-XN2MM

MG1275H-XN2MM

Wickmann / Littelfuse

IGBT MOD 1200V 105A 348W

0

FPF2G120BF07AS

FPF2G120BF07AS

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 650V 40A 156W F2

64

APT65GP60JDQ2

APT65GP60JDQ2

Roving Networks / Microchip Technology

IGBT 600V 130A 431W SOT227

0

APTGT150DU120G

APTGT150DU120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 220A 690W SP6

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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