Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
GSID150A120S5C1 SemiQ	IGBT MOD 1200V 285A 1087W	0
FP50R06KE3BOSA1 IR (Infineon Technologies)	IGBT MODULE 600V 60A 190W	4
FS3L30R07W2H3FB11BPSA2 IR (Infineon Technologies)	IGBT MOD 650V 30A 20MW	7
IXGN100N170 Wickmann / Littelfuse	IGBT MOD 1700V 160A 735W SOT227B	0
APTGT75TA120PG Roving Networks / Microchip Technology	IGBT MODULE 1200V 100A 350W SP6P	0
APT50GP60J Roving Networks / Microchip Technology	IGBT MOD 600V 100A 329W ISOTOP	0
GSID100A120S5C1 SemiQ	IGBT MOD 1200V 170A 650W	0
FF300R12KS4PHOSA1 IR (Infineon Technologies)	IGBT MODULE 1200V 300A	0
FMG2G300US60	IGBT, 300A, 600V, N-CHANNEL	3
MG1240H-XBN2MM Wickmann / Littelfuse	IGBT MOD 1200V 25A 105W	0
FF200R12KT3HOSA1 IR (Infineon Technologies)	IGBT MODULE 1200V 1050W	40
FP15R12W1T7PB3BPSA1 IR (Infineon Technologies)	LOW POWER EASY	0
FF1800R12IE5BPSA1 IR (Infineon Technologies)	IGBT MOD 1200V 1800A 20MW	2
DDB6U84N16RRBOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 50A 350W	56
MIXA60WH1200TEH Wickmann / Littelfuse	IGBT MODULE 1200V 85A 290W E3	0
FD800R33KF2CKNOSA1 IR (Infineon Technologies)	IGBT MODULE 3300V 9600W	0
MG06600WB-BN4MM Wickmann / Littelfuse	IGBT MOD 600V 600A 1500W	0
APTGT300DA120G Roving Networks / Microchip Technology	IGBT MODULE 1200V 420A 1380W SP6	0
APTGL475U120DAG Roving Networks / Microchip Technology	IGBT MODULE 1200V 610A 2307W SP6	0
A2C50S65M2 STMicroelectronics	IGBT MOD 650V 50A 208W ACEPACK2	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability