Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN1R6-30MLHX Nexperia	MOSFET N-CH 30V 160A LFPAK33	4178
PHK04P02T,518 Nexperia	MOSFET P-CH 16V 4.66A 8SO	0
PSMN4R3-40MLHX Nexperia	MOSFET N-CH 40V 95A LFPAK33	2923
BSP126,115 Nexperia	MOSFET N-CH 250V 375MA SOT223	7607
PSMN9R5-100BS,118 Nexperia	MOSFET N-CH 100V 89A D2PAK	2455
PMV40UN2R Nexperia	MOSFET N-CH 30V 3.7A TO236AB	3588
BSN20,215 Nexperia	MOSFET N-CH 50V 173MA TO236AB	198946
PSMN8R7-100YSFX Nexperia	MOSFET N-CH 100V 100A LFPAK56	0
BSP220,115 Nexperia	MOSFET P-CH 200V 225MA SOT223	17795
BUK9604-40A,118 Nexperia	MOSFET N-CH 40V 75A D2PAK	0
BSH111,215 Nexperia	MOSFET N-CH 55V 335MA TO236AB	412824
PHT6NQ10T,135 Nexperia	MOSFET N-CH 100V 3A SOT223	8926
PSMN009-100B,118 Nexperia	MOSFET N-CH 100V 75A D2PAK	0
PMK35EP,518 Nexperia	MOSFET P-CH 30V 14.9A 8SO	2048
PSMN4R5-30YLC,115 Nexperia	MOSFET N-CH 30V 84A LFPAK56	1460
PSMN045-80YS,115 Nexperia	MOSFET N-CH 80V 24A LFPAK56	0
PSMN7R6-60BS,118 Nexperia	MOSFET N-CH 60V 92A D2PAK	55
BUK753R1-40E,127 Nexperia	MOSFET N-CH 40V 100A TO220AB	0
PSMN1R8-30BL,118 Nexperia	MOSFET N-CH 30V 100A D2PAK	12
PSMN3R0-30YLDX Nexperia	MOSFET N-CH 30V 100A LFPAK56	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS