Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PMN70XPX Nexperia	MOSFET P-CH 20V 3.1A 6TSOP	0
PSMN008-75B,118 Nexperia	MOSFET N-CH 75V 75A D2PAK	4000
PMV65XP,215 Nexperia	MOSFET P-CH 20V 2.8A TO236AB	14342
PSMN012-60YS,115 Nexperia	MOSFET N-CH 60V 59A LFPAK56	45
PSMN3R2-30YLC,115 Nexperia	ELEMENT, NCHANNEL, SILICON, MOSF	1251
BUK7Y8R7-60EX Nexperia	MOSFET N-CH 60V 87A LFPAK56	0
PSMN6R1-30YLDX Nexperia	MOSFET N-CH 30V 66A LFPAK56	0
BUK7Y14-80EX Nexperia	MOSFET N-CH 80V 65A LFPAK56	49
BUK9M17-30EX Nexperia	MOSFET N-CH 30V 37A LFPAK33	215
PXN9R0-30QLJ Nexperia	PXN9R0-30QL/SOT8002/MLPAK33	3000
BUK6Y14-40PX Nexperia	MOSFET P-CH 40V 64A LFPAK56	0
BUK964R7-80E,118 Nexperia	MOSFET N-CH 80V 120A D2PAK	2812
PMF250XNEX Nexperia	MOSFET N-CH 30V 1A SOT323	14837
BUK9606-55B,118 Nexperia	MOSFET N-CH 55V 75A D2PAK	7865
BUK9209-40B,118 Nexperia	TRANSISTOR >30MHZ	0
PMZ130UNEYL Nexperia	MOSFET N-CH 20V 1.8A DFN1006-3	0
NX3020NAKW,115 Nexperia	MOSFET N-CH 30V 180MA SOT323	219436
PSMNR70-30YLHX Nexperia	MOSFET N-CH 30V 300A LFPAK56	0
PMV45EN2VL Nexperia	MOSFET N-CH 30V 5.1A TO236AB	0
PMBF170,215 Nexperia	MOSFET N-CH 60V 300MA TO236AB	139242

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS