Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVMFS5A140PLZT3G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 20A/140A 5DFN	0
FQT1N60CTF-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 200MA SOT223-4	20470
FQB50N06LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 52.4A D2PAK	193
FQD13N06LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 11A DPAK	155
FDD5N50UTM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 3A DPAK	0
NVMFS5C404NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 370A 5DFN	0
FCH067N65S3-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 44A TO247	398
NTMS4801NR2G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 7.5A 8SOIC	0
NTMFS4925NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9.7A/48A 5DFN	0
FDMS030N06B Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22.1A/100A 8PQFN	1840
NTTFS5C453NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 23A/107A 8WDFN	0
NVMYS021N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 9.8A/27A 4LFPAK	25129000
FDP2532 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 8A/79A TO220-3	0
FQPF5N60C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 4.5A TO220F	2863000
FQD7P06TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 5.4A DPAK	87992500
NTD18N06LT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 18A DPAK	139
NVTFWS004N04CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 18A/77A 8WDFN	0
FQP8N60C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7.5A TO220-3	81020000
FDMC3020DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 17A/40A DLCOOL33	293
FDH44N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 44A TO247-3	316

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS