Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMS003N08C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 22A/147A POWER56	0
FDD8444 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 145A TO252AA	4710
IRFS450B Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 9.6A TO3PF	7920
NTR4503NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 1.5A SOT23-3	680
FCD1300N80Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 4A DPAK	2492
FDB047N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 120A D2PAK	2135
NVMYS4D1N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22A/100A LFPAK4	3000
NVMFS5C410NAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 46A/300A 5DFN	0
FQD5P10TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 3.6A DPAK	3769
FDD9509L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 90A DPAK	7500
NTHL020N090SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 900V 118A TO247-3	492
PCP1302-TD-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 3A SOT89/PCP-1	0
FDS5672 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A 8SOIC	15209
FDMC86139P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 4.4A/15A 8MLP	33089
NTMFS5C410NLTWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 50A/330A 5DFN	0
FCPF165N65S3R0L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 19A TO220F-3	995
NVMFS5C466NWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 15A/49A 5DFN	0
FDMC6675BZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 9.5A/20A 8MLP	309
FDP20N50F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 20A TO220-3	526
FDT86246 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 2A SOT223-4	1461

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS