Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
BS270 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 400MA TO92-3	1915
NVTR4503NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 1.5A SOT23-3	1951
FQPF9P25 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 250V 6A TO220F-3	739
NVF3055L108T3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 3A SOT223	2617
FDU6N25 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 4.4A IPAK	4801
NDT014 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 2.7A SOT-223-4	5949
NVMFS5C426NWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 41A/235A 5DFN	0
NVD3055L170T4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 9A DPAK	2480
FDS86240 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 7.5A 8SOIC	274
FQD10N20LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 7.6A TO252	0
NVHL027N65S3F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 75A TO247-3	363900
FCP36N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 36A TO220-3	892
FDN336P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 1.3A SUPERSOT3	2860
NVMFS5C673NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 60V 50A 5DFN	0
FDC3535 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 80V 2.1A SUPERSOT6	22
FDG410NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 2.2A SC88	2139
NTGS3130NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 4.23A 6TSOP	0
FDFS6N548 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 7A 8SOIC	42572500
NTMFS5C673NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 5DFN	0
NTMFS6H818NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 20A/123A 5DFN	477

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS