Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMS8020 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 26A/42A 8PQFN	3000
FDD3670 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 34A TO252	0
FDP100N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 75A TO220-3	677
NTMYS2D2N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 31A/185A LFPAK4	12000
FDMC86248 Sanyo Semiconductor/ON Semiconductor	MOSFET N CH 150V 3.4A POWER33	0
NVMFS6H858NWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 8.4A/29A 5DFN	9000
FDD5690 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 30A TO252	119
FDME905PT Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 12V 8A MICROFET	961
NVMFS5C404NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 370A 5DFN	0
NVMFS5C442NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 29A/130A 5DFN	0
FQPF7N65CYDTU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 7A TO220F-3	747800
FDS2734 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 3A 8SOIC	30911
NTD20N06T4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 20A DPAK	215932500
NTTFS4C05NTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 12A/75A 8WDFN	10000
ATP113-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 35A ATPAK	5835
NTMFS4937NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.2A/70A 5DFN	160
FDMS8026S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 19A/22A 8PQFN	2685
FQD9N25TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	3315
FQU2N100TU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1000V 1.6A IPAK	1147
NVR4501NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 3.2A SOT23-3	2147483647

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS