Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT32M80J Roving Networks / Microchip Technology	MOSFET N-CH 800V 33A ISOTOP	0
APT34N80LC3G Roving Networks / Microchip Technology	MOSFET N-CH 800V 34A TO264	0
APT14M120S Roving Networks / Microchip Technology	MOSFET N-CH 1200V 14A D3PAK	150
APTM10UM01FAG Roving Networks / Microchip Technology	MOSFET N-CH 100V 860A SP6	0
APT5024SLLG/TR Roving Networks / Microchip Technology	MOSFET N-CH 500V 22A D3PAK	0
VN2224N3-G Roving Networks / Microchip Technology	MOSFET N-CH 240V 540MA TO92-3	0
APT60M60JLL Roving Networks / Microchip Technology	MOSFET N-CH 600V 70A ISOTOP	0
VP2206N3-G-P003 Roving Networks / Microchip Technology	MOSFET P-CH 60V 640MA TO92-3	0
APT22F120L Roving Networks / Microchip Technology	MOSFET N-CH 1200V 23A TO264	5
TN0104N3-G-P003 Roving Networks / Microchip Technology	MOSFET N-CH 40V 450MA TO92-3	0
APT5010JLLU3 Roving Networks / Microchip Technology	MOSFET N-CH 500V 41A SOT227	0
VN0300L-G-P002 Roving Networks / Microchip Technology	MOSFET N-CH 30V 640MA TO92-3	0
APT34M60S/TR Roving Networks / Microchip Technology	MOSFET N-CH 600V 36A D3PAK	0
TP2510N8-G Roving Networks / Microchip Technology	MOSFET P-CH 100V 480MA TO243AA	16347
APT50M85JVR Roving Networks / Microchip Technology	MOSFET N-CH 500V 50A ISOTOP	0
APT12M80B Roving Networks / Microchip Technology	MOSFET N-CH 800V 13A TO247	0
APT18F60B Roving Networks / Microchip Technology	MOSFET N-CH 600V 19A TO247	0
APT30M30JLL Roving Networks / Microchip Technology	MOSFET N-CH 300V 88A ISOTOP	0
APT14F100S Roving Networks / Microchip Technology	MOSFET N-CH 1000V 14A D3PAK	0
VN0106N3-G Roving Networks / Microchip Technology	MOSFET N-CH 60V 350MA TO92-3	1300

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS