Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT6025BLLG Roving Networks / Microchip Technology	MOSFET N-CH 600V 24A TO247	0
DN2470K4-G Roving Networks / Microchip Technology	MOSFET N-CH 700V 170MA TO252	22420
APT37M100B2 Roving Networks / Microchip Technology	MOSFET N-CH 1000V 37A T-MAX	30
APT39M60J Roving Networks / Microchip Technology	MOSFET N-CH 600V 42A ISOTOP	0
APT20M22LVRG Roving Networks / Microchip Technology	MOSFET N-CH 200V 100A TO264	1
MSC060SMA070B Roving Networks / Microchip Technology	SICFET N-CH 700V 39A TO247-3	111
MSC040SMA120J Roving Networks / Microchip Technology	SICFET N-CH 1200V 53A SOT227	27
APT40M70LVRG Roving Networks / Microchip Technology	MOSFET N-CH 400V 57A TO264	90
APT50M85JVFR Roving Networks / Microchip Technology	MOSFET N-CH 500V 50A ISOTOP	0
APT10090BFLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 12A TO247	0
APT38F80L Roving Networks / Microchip Technology	MOSFET N-CH 800V 41A TO264	0
2N7002-G Roving Networks / Microchip Technology	MOSFET N-CH 60V 115MA SOT23	840
APT6013JFLL Roving Networks / Microchip Technology	MOSFET N-CH 600V 39A ISOTOP	0
APT50M75LLLG Roving Networks / Microchip Technology	MOSFET N-CH 500V 57A TO264	0
APT10050LVRG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 21A TO264	0
TP2522N8-G Roving Networks / Microchip Technology	MOSFET P-CH 220V 260MA TO243AA	0
APT44F80L Roving Networks / Microchip Technology	MOSFET N-CH 800V 47A TO264	0
APT1201R4BLLG Roving Networks / Microchip Technology	MOSFET N-CH 1200V 9A TO247	150
DN2530N8-G Roving Networks / Microchip Technology	MOSFET N-CH 300V 200MA TO243AA	0
APT18M100B Roving Networks / Microchip Technology	MOSFET N-CH 1000V 18A TO247	15

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS