Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
MIC94030YM4TR Roving Networks / Microchip Technology	MOSFET P-CH 16V 1A SOT143	0
APT10045LLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 23A TO264	0
MSC40SM120JCU2 Roving Networks / Microchip Technology	TRANS SJT N-CH 1.2KV 55A SOT227	54
APT1001R6BFLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 8A TO247	0
APT60M75JVR Roving Networks / Microchip Technology	MOSFET N-CH 600V 62A ISOTOP	0
APT30N60BC6 Roving Networks / Microchip Technology	MOSFET N-CH 600V 30A TO247	38
APT34F100B2 Roving Networks / Microchip Technology	MOSFET N-CH 1000V 35A T-MAX	0
TP2540N8-G Roving Networks / Microchip Technology	MOSFET P-CH 400V 125MA TO243AA	0
APT56F50B2 Roving Networks / Microchip Technology	MOSFET N-CH 500V 56A T-MAX	40
APT8M100B Roving Networks / Microchip Technology	MOSFET N-CH 1000V 8A TO247	121
TP0604N3-G Roving Networks / Microchip Technology	MOSFET P-CH 40V 430MA TO92-3	813
TN0106N3-G Roving Networks / Microchip Technology	MOSFET N-CH 60V 350MA TO92-3	3352
VN0109N3-G Roving Networks / Microchip Technology	MOSFET N-CH 90V 350MA TO92-3	1655
APT5010JLLU2 Roving Networks / Microchip Technology	MOSFET N-CH 500V 41A SOT227	48
VN2210N2 Roving Networks / Microchip Technology	MOSFET N-CH 100V 1.7A TO39	26
APTM100UM65SAG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 145A SP6	28
APT34N80B2C3G Roving Networks / Microchip Technology	MOSFET N-CH 800V 34A T-MAX	26
VP0104N3-G Roving Networks / Microchip Technology	MOSFET P-CH 40V 250MA TO92-3	898
APT5018SLLG Roving Networks / Microchip Technology	MOSFET N-CH 500V 27A D3PAK	0
APTM20SKM04G Roving Networks / Microchip Technology	MOSFET N-CH 200V 372A SP6	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS