Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R8008ANX ROHM Semiconductor	MOSFET N-CH 800V 8A TO220FM	952
RQ3E130MNTB1 ROHM Semiconductor	MOSFET N-CH 30V 13A HSMT8	2988
RAF040P01TCL ROHM Semiconductor	MOSFET P-CH 12V 4A TUMT3	1791
RD3P08BBDTL ROHM Semiconductor	MOSFET N-CH 100V 80A TO252	2436
RSQ035N03HZGTR ROHM Semiconductor	MOSFET N-CH 30V 3.5A TSMT6	2482
RTQ020N05HZGTR ROHM Semiconductor	MOSFET N-CH 45V 2A TSMT6	2815
RQ3E110AJTB ROHM Semiconductor	MOSFET N-CH 30V 11A/24A 8HSMT	3217
R5016FNX ROHM Semiconductor	MOSFET N-CH 500V 16A TO220FM	564
RQ5E020SPTL ROHM Semiconductor	MOSFET P-CH 30V 2A TSMT3	2449
SCT3120ALHRC11 ROHM Semiconductor	SICFET N-CH 650V 21A TO247N	322
R6035KNZ1C9 ROHM Semiconductor	MOSFET N-CHANNEL 600V 35A TO247	292
RV2C001ZPT2L ROHM Semiconductor	MOSFET P-CH 20V 100MA DFN1006-3	2248
RQ1E100XNTR ROHM Semiconductor	MOSFET N-CH 30V 10A TSMT8	0
RSH070P05GZETB ROHM Semiconductor	MOSFET P-CH 45V 7A 8SOP	1238
RSY160P05TL ROHM Semiconductor	MOSFET P-CH 45V 16A TCPT3	2910
RQ6E035TNTR ROHM Semiconductor	MOSFET N-CH 30V 3.5A TSMT6	2967
R6030JNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 30A TO247G	600
RAQ045P01TCR ROHM Semiconductor	MOSFET P-CH 12V 4.5A TSMT6	3000
RSD220N06TL ROHM Semiconductor	MOSFET N-CH 60V 22A CPT3	3816
RQ5E035BNTCL ROHM Semiconductor	MOSFET N-CH 30V 3.5A TSMT3	15494

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS