Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
SCT3030ALHRC11 ROHM Semiconductor	SICFET N-CH 650V 70A TO247N	832
RSF015N06TL ROHM Semiconductor	MOSFET N-CH 60V 1.5A TUMT3	1596
R6008FNX ROHM Semiconductor	MOSFET N-CH 600V 8A TO-220FM	777
RDR005N25TL ROHM Semiconductor	MOSFET N-CH 250V 500MA TSMT3	8473
RF4E070BNTR ROHM Semiconductor	MOSFET N-CH 30V 7A HUML2020L8	860
RQ6E035ATTCR ROHM Semiconductor	MOSFET P-CH 30V 3.5A TSMT6	20
RQ3E180GNTB ROHM Semiconductor	MOSFET N-CH 30V 18A 8HSMT	3000
R5009FNX ROHM Semiconductor	MOSFET N-CH 500V 9A TO220FM	362
RQ1A070ZPTR ROHM Semiconductor	MOSFET P-CH 12V 7A TSMT8	5683
RSH065N06GZETB ROHM Semiconductor	MOSFET N-CH 60V 6.5A 8SOP	1920
R6011KNJTL ROHM Semiconductor	MOSFET N-CH 600V 11A LPTS	427
RSJ400N10TL ROHM Semiconductor	MOSFET N-CH 100V 40A LPTS	550
RUS100N02TB ROHM Semiconductor	MOSFET N-CH 20V 10A 8SOP	1082
RTQ035N03HZGTR ROHM Semiconductor	MOSFET N-CH 30V 3.5A TSMT6	2980
RQ7L050ATTCR ROHM Semiconductor	PCH -60V -5A SMALL SIGNAL POWER	50
RSR030N06TL ROHM Semiconductor	MOSFET N-CH 60V 3A TSMT3	61651
RX3G07CGNC16 ROHM Semiconductor	MOSFET N-CH 40V 70A TO220AB	1000
R6042JNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 42A TO247G	587
RSR010N10TL ROHM Semiconductor	MOSFET N-CH 100V 1A TSMT3	6923
R5007ANX ROHM Semiconductor	MOSFET N-CH 500V 7A TO220FM	282

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS