Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6511ENJTL ROHM Semiconductor	MOSFET N-CH 650V 11A LPTS	100
RSR020P05TL ROHM Semiconductor	MOSFET P-CH 45V 2A TSMT3	2248
RSR025P03HZGTL ROHM Semiconductor	MOSFET P-CH 30V 2.5A TSMT3	4568
RSH110N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 11A 8SOP	0
RSQ015N06TR ROHM Semiconductor	MOSFET N-CH 60V 1.5A TSMT6	2394
SCT3080ALGC11 ROHM Semiconductor	SICFET N-CH 650V 30A TO247N	1705
RCJ220N25TL ROHM Semiconductor	MOSFET N-CH 250V 22A LPTS	217
SCT2120AFC ROHM Semiconductor	SICFET N-CH 650V 29A TO220AB	1689
SCT2450KEC ROHM Semiconductor	SICFET N-CH 1200V 10A TO247	0
RHU002N06T106 ROHM Semiconductor	MOSFET N-CH 60V 200MA UMT3	0
RQ5E025SNTL ROHM Semiconductor	MOSFET N-CH 30V 2.5A TSMT3	3790
R6015ENX ROHM Semiconductor	MOSFET N-CH 600V 15A TO220FM	78
R8002ANJFRGTL ROHM Semiconductor	MOSFET N-CH 800V 2A LPTS	915
RSJ151P10TL ROHM Semiconductor	MOSFET P-CH 100V 15A LPTS	109
QS5U12TR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT5	2383
RRH140P03GZETB ROHM Semiconductor	MOSFET P-CH 30V 14A 8SOP	2006
RTL035N03FRATR ROHM Semiconductor	MOSFET N-CH 30V 3.5A TUMT6	5926
RQ5L015SPTL ROHM Semiconductor	MOSFET P-CH 60V 1.5A TSMT3	1232
RSQ020N03TR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT6	2610
R6006JND3TL1 ROHM Semiconductor	MOSFET N-CH 600V 6A TO252	68

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS