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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOI360A70

AOI360A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 12A TO251A

3499
AOT470

AOT470

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 75V 10A/100A TO220

0
AOB66616L

AOB66616L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 38.5A/140A TO263

666
AOT12N50

AOT12N50

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 500V 12A TO220

0
AOB7S60L

AOB7S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO263

0
AOB66916L

AOB66916L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 35.5/120A TO263

1064
AOI4286

AOI4286

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 100V 4A/14A TO251A

2141
AO4496

AO4496

Alpha and Omega Semiconductor, Inc.

MOSFET N CH 30V 10A 8SOIC

0
AOV15S60

AOV15S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 520MA/12A 4DFN

0
AOI2N60

AOI2N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 2A TO251A

0
AOV20S60

AOV20S60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 3.6A/18A 4DFN

0
AONR36326C

AONR36326C

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 12A/12A 8DFN

0
AOT11S60L

AOT11S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 11A TO220

1000
AOT25S65L

AOT25S65L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 650V 25A TO220

0
AON7421

AON7421

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 20V 30A/50A 8DFN

4000
AOTF66616L

AOTF66616L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 38A/72.5A TO220F

1973
AOU4N60

AOU4N60

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 4A TO251-3

2927
AOT20S60L

AOT20S60L

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 20A TO220

609
AON7566

AON7566

Alpha and Omega Semiconductor, Inc.

MOSFET N-CHANNEL 30V 34A 8DFN

0
AOY423

AOY423

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 15A/70A TO251B

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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