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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFP048NPBF

IRFP048NPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

40257
IRF3704ZSPBF

IRF3704ZSPBF

IR (Infineon Technologies)

MOSFET N-CH 20V 67A D2PAK

0
SPPO4N80C3

SPPO4N80C3

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
AUIRF2903Z

AUIRF2903Z

IR (Infineon Technologies)

MOSFET N-CH 30V 160A TO220AB

2150
IRFR1010ZPBF

IRFR1010ZPBF

IR (Infineon Technologies)

IRFR1010 - 12V-300V N-CHANNEL PO

7980
IPA50R800CEXKSA2

IPA50R800CEXKSA2

IR (Infineon Technologies)

MOSFET N-CH 500V 4.1A TO220

0
IPA057N08N3G

IPA057N08N3G

IR (Infineon Technologies)

IPA057N08 - 12V-300V N-CHANNEL P

0
SPI12N50C3XKSA1

SPI12N50C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 560V 11.6A TO262-3

500
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 49A TDSON

61106
AUIRFR3504TRL

AUIRFR3504TRL

IR (Infineon Technologies)

MOSFET N-CH 40V 56A DPAK

9112
AUIRFB3806

AUIRFB3806

IR (Infineon Technologies)

MOSFET N-CH 60V 43A TO220AB

600
SPB04N60C3ATMA1

SPB04N60C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 4.5A TO263-3-2

54444
IPB80N04S2-H4ATMA2

IPB80N04S2-H4ATMA2

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

4000
IRFR7740PBF

IRFR7740PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 87A DPAK

150
IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 120A TO263-3

268
IPB120N06S403ATMA2

IPB120N06S403ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 120A TO263-3

828
IRLR8721PBF

IRLR8721PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 65A DPAK

0
IPD122N10N3GATMA1

IPD122N10N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 59A TO252-3

34187
IPP60R180P7XKSA1

IPP60R180P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 18A TO220-3

824
SPA17N80C3XKSA1

SPA17N80C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 17A TO220-3

5041

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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